Business

Thermal Process Technology

We provide rapid thermal process equipment, the core equipment in the
entire process of semiconductors, to the client companies.

  • Rapid Thermal Processing(RTP) equipment, which treats wafers with high temperature in a short time using tungsten halogen lamps, is applied to
    various processes such as implantation and diffusion.
  • Rapid Thermal Process
  • Soak
    Spike

Technology

It is a non-contact rotation using magnet properties (Magnetic Levitation), which secures excellent temperature uniformity within the surface.

Specification

Spec Items Unit Specification
Temperature Reading Range ℃ 400 ~ 1250
Temperature Control Range ℃ 435 ~ 1200
Temperature Ramping-Up Rate ℃/sec Up: 250℃/sec, Down: -90℃/sec
Process Pressure Torr 780±2 ~ 1×10-3
RTO Range @ 1100℃, 60sec, X-scan, 49Points, 3 EE Å, 1σ ≤±0.5
Rs Range @ 700 ~ 1100℃, X-scan, 81Points, 3 EE Ω/Sq, 1σ ≤15
Pyrometer to Pyrometer Peak Temp Uniformity ℃ Target±1.0℃ @Bare Wafer
RTO/Rs Non-uniformity %,1σ RTO: 0.48%, Rs: 0.72%
RTO/Rs Repeatability %,1σ ≤1.5%, 1σ
Temp. Stability & Repeatability ℃ <±1.0℃
Rs WTW Non-Uniformity %,1σ <1%, 1σ
Mechanical Throughput (2 Chambers) WPH 142

Features

  • 2 Chamber
  • ATM equipment
  • 3 Load Port
  • Integral MPD
Item Description Unit Specification Remarks
EFEM Load Port Quantity Set 3 LPP(option)
ATM-Dual Robot Set 1
Process Module Heater Block Process Pressure Torr 800 ~ ATM
Ch. Body
T Shape LAMP Quantity ea 290
Power Electrical Rack SPEC General Power 208V, 3PH, MCCB630A
Temp. Control Performance Control Range ℃ 450 ~ 1150℃ ±1.5℃ Control
Ramping-Up ℃ Max. +250℃/sec spike
Ramping-Down ℃ Max. -90℃/sec
Pyrometers per chamber Quantity ea 5
Process 49 Points RTO Range Å ≤1 @1σ

Features

  • 3 Chamber
  • Vacuum equipment
  • 3 Load Port
  • Seperate MPD Box on the lower side
Item Description Unit Specification Remarks
EFEM Load Port Quantity Set 3 LPP(option)
ATM-Dual Robot Set 1(with Aligner)
VTM Stack Load Lock Quantity Set 4 Particle Free
Pentagon VTM Set 1
Process Module Heater Block Process Pressure Torr >2
Ch. Body
T Shape LAMP Quantity ea 290
MPD Electrical Rack Quantity Set 3
SPEC General Power 208V, 3PH, MCCB630A
Temp. Control Performance Control Range ℃ 450 ~ 1150℃ ±0.5℃ Control
Ramping-Up ℃ Max. +100℃/sec
Ramping-Down ℃ Max. -40℃/sec
Pyrometers per chamber Quantity ea 5
Process 49 Points RTO Range Å ≤1 @1σ
Close