Technology and Products
AP Systems, moving forward into the world with a passion for endless research and technological developments
Thermal Process Technology
We provide rapid thermal process equipment, the core equipment in the entire process of semiconductors, to the client companies.
- Rapid Thermal Processing (RTP) equipment, which treats wafers with high temperature in a short time using tungsten halogen lamps, is applied to the oxidation process.
- Rapid Thermal Process
- Halogen lamp
Rapid Thermal Process
KORONA™ RTP-12MP
KORONA™ RTP-12LR
The advantage of RTP is the ability to heat or cool rapidly, which raises or lowers the temperature quickly, so cost of thermal process can be greatly reduced. AP Systems’ RTP equipment provides excellent temperature uniformity, wafer rotation, emissivity compensation, and intelligent temperature control.
Technology
It is a non-contact rotation using magnet properties (Magnetic Levitation), which secures excellent temperature uniformity within the surface.
Specification
| Spec Items | Unit | Specification |
|---|---|---|
| Temperature Reading Range | ℃ | 400 ~ 1250 |
| Temperature Control Range | ℃ | 435 ~ 1200 |
| Temperature Ramping-Up Rate | ℃/sec | Up: 250℃/sec, Down: -90℃/sec |
| Process Pressure | Torr | 780±2 ~ 1×10-3 |
| RTO Range @ 1100℃, 60sec, X-scan, 49Points, 3 EE | Å, 1σ | ≤±0.5 |
| Rs Range @ 700 ~ 1100℃, X-scan, 81Points, 3 EE | Ω/Sq, 1σ | ≤15 |
| Pyrometer to Pyrometer Peak Temp Uniformity | ℃ | Target±1.0℃ @Bare Wafer |
| RTO/Rs Non-uniformity | %,1σ | RTO: 0.48%, Rs: 0.72% |
| RTO/Rs Repeatability | %,1σ | ≤1.5%, 1σ |
| Temp. Stability & Repeatability | ℃ | <±1.0℃ |
| Rs WTW Non-Uniformity | %,1σ | <1%, 1σ |
| Mechanical Throughput (2 Chambers) | WPH | 142 |
| Item | Description | Unit | Specification | Remarks | |
|---|---|---|---|---|---|
| EFEM | Load Port | Set | 2 ~ 3 | Class 10 | |
| ATM-Robot & Aligner | Set | 1(Aligner: Option) | |||
| TM (Option) | Load Lock | Set | 1(mTorr) | Particle Free | |
| Transfer Chamber | Set | 1(mTorr) | |||
| Process Module | Heater Block | Advanced Mosaic Array | Set | 1 ~ 3(mTorr) | |
| Ch. Body | Cold Wall Chamber | Set | 1 ~ 3(mTorr) | ||
| Lamp | Type | ea | 290(T Shape Bulb) | ||
| Temp. Control | Temp. Control Performance | Control Range | ℃ | 435 ~ 1200℃ | ±0.5℃ Control (Option: Spike) |
| Ramping-Up | ℃ | Max. +240℃/sec | |||
| Ramping-Down | ℃ | Max. -80℃/sec | |||
| Pyrometers per chamber | Quantity | ea | 5 | ||
| Process | 49 Points RTO Range | Å | ≤1 @1σ | ||
| 49 Points Rs Non-Uniformity | % | ≤1 @1σ | |||
